for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 34 linear & power amplifiers - smt hmc408lp3 / 408lp3e gaas ingap hbt mmic 1 watt power amplifier, 5.1 - 5.9 ghz v03.0705 general description features functional diagram the hmc408lp3 & HMC408LP3E are 5.1 - 5.9 ghz high efficiency gaas ingap heterojunction bipolar transistor (hbt) power ampli er mmics which offer +30 dbm p1db. the ampli er provides 20 db of gain, +32.5 dbm of saturated power, and 27% pae from a +5v supply voltage. the input is internally matched to 50 ohms while the output requires a minimum of external components. vpd can be used for full power down or rf output power/current control. the ampli er is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved rf and thermal performance. gain: 20 db saturated power: +32.5 dbm @ 27% pae single supply voltage: +5v power down capability 3x3 mm leadless smt package electrical speci cations, t a = +25 c, vs = 5v, vpd = 5v typical applications the hmc408lp3 / HMC408LP3E is ideal for: ? 802.11a & hiperlan wlan ? unii & point-to-point / multi-point radios ? access point radios parameter min. typ. max. min. typ. max. units frequency range 5.7 - 5.9 5.1 - 5.9 ghz gain 17 20 17 20 db gain variation over temperature 0.045 0.055 0.045 0.055 db/c input return loss 8 8 db output return loss* 14 6 db output power for 1 db compression (p1db) icq= 750 ma icq= 500 ma 27 30 27 24 27 23 dbm saturated output power (psat) 32.5 31 dbm output third order intercept (ip3) 40 43 36 39 dbm harmonics, pout= 30 dbm, f= 5.8 ghz 2 fo 3 fo -50 -90 -50 -90 dbc dbc noise figure 6 6 db supply current (icq) vpd= 0v/5v 0.002 / 750 0.002 / 750 ma control current (ipd) vpd= 5v 14 14 ma switching speed ton, toff 50 50 ns * output match optimized for 5.7 - 5.9 ghz operation. see application circuit herein.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 35 input return loss vs. temperature output return loss vs. temperature* broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature * output match optimized for 5.7 - 5.9 ghz. -25 -15 -5 5 15 25 345678 s21 s11 s22 response (db) frequency (ghz) -20 -16 -12 -8 -4 0 4.8 5 5.2 5.4 5.6 5.8 6 6.2 +25 c +85 c -40 c return loss (db) frequency (ghz) -20 -15 -10 -5 0 4.8 5 5.2 5.4 5.6 5.8 6 6.2 +25 c +85 c -40 c return loss (db) frequency (ghz) 12 15 18 21 24 27 30 33 36 4.8 5 5.2 5.4 5.6 5.8 6 6.2 +25 c +85 c -40 c psat (dbm) frequency (ghz) 12 16 20 24 28 32 36 4.8 5 5.2 5.4 5.6 5.8 6 6.2 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 4.8 5 5.2 5.4 5.6 5.8 6 6.2 +25 c +85 c -40 c gain (db) frequency (ghz) hmc408lp3 / 408lp3e gaas ingap hbt mmic 1 watt power amplifier, 5.1 - 5.9 ghz v03.0705
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 36 linear & power amplifiers - smt power compression @ 5.8 ghz output ip3 vs. temperature noise figure vs. temperature reverse isolation vs. temperature gain, power & quiescent supply current vs. vpd @ 5.8 ghz gain & power vs. supply voltage @ 5.8 ghz 18 20 22 24 26 28 30 32 34 4.75 5 5.25 gain p1db psat gain (db), p1db (dbm), psat (dbm) vcc supply voltage (vdc) 0 2 4 6 8 10 4.8 5 5.2 5.4 5.6 5.8 6 6.2 +25 c +85 c -40 c noise figure (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 4.8 5 5.2 5.4 5.6 5.8 6 6.2 reverse isolation power down isolation isolation (db) frequency (ghz) 30 33 36 39 42 45 4.8 5 5.2 5.4 5.6 5.8 6 6.2 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 12 15 18 21 24 27 30 33 36 0 100 200 300 400 500 600 700 800 3 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 gain p1db psat icq gain (db), p1db (dbm), psat (dbm) icq (ma) vpd (vdc) 0 6 12 18 24 30 36 -10 -5 0 5 10 15 20 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) hmc408lp3 / 408lp3e gaas ingap hbt mmic 1 watt power amplifier, 5.1 - 5.9 ghz v03.0705
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 37 outline drawing absolute maximum ratings typical supply current vs. vs= vcc1 + vcc2 note: ampli er will operate over full voltage range shown above vs (v) icq (ma) 4.75 725 5.0 750 5.25 780 collector bias voltage (vcc1, vcc2) +5.5 vdc control voltage (vpd) +5.5 vdc rf input power (rfin)(vs = vpd = +5vdc) +20 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 72.5 mw/ c above 85 c) 4.71 w thermal resistance (junction to ground paddle) 13.8 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. lead spacing tolerance is non-cumulative 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hittite application note for suggested land pattern. part number package body material lead finish msl rating package marking [3] hmc408lp3 low stress injection molded plastic sn/pb solder msl1 [1] 408 xxxx HMC408LP3E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 408 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information hmc408lp3 / 408lp3e gaas ingap hbt mmic 1 watt power amplifier, 5.1 - 5.9 ghz v03.0705 electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 38 linear & power amplifiers - smt pin descriptions pin number function description interface schematic 1vpd power control pin. for maximum power, this pin should be connected to 5v. a higher voltage is not recommended. for lower idle current, this voltage can be reduced. 2, 4, 5 - 8, 12, 13, 15 n/c no connection 3rfin this pin ac coupled and matched to 50 ohms. 9, 10, 11 rfout rf output and dc bias for the output stage. 14 vcc2 power supply voltage for the second ampli er stage. exter- nal bypass capacitors and pull up choke are required as shown in the application schematic. 16 vcc1 power supply voltage for the rst ampli er stage. external bypass capacitors are required as shown in the application schematic. gnd ground: backside of package has exposed metal ground slug that must be connected to ground thru a short path. vias under the device are required. hmc408lp3 / 408lp3e gaas ingap hbt mmic 1 watt power amplifier, 5.1 - 5.9 ghz v03.0705
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 39 evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 105180 [1] item description j1 - j2 pcb mount sma rf connector j3 2 mm dc header c1 - c4 1,000 pf capacitor, 0603 pkg. c5 - c7 100 pf capacitor, 0402 pkg. c8 2.2 f tantalum capacitor c9 - c10 0.5 pf capacitor, 0603 pkg. c11 10 pf capacitor, 0402 pkg. l1 - l2 1.6 nh inductor, 0603 pkg. u1 hmc408lp3 / HMC408LP3E ampli er pcb [2] 104629 eval board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc408lp3 / 408lp3e gaas ingap hbt mmic 1 watt power amplifier, 5.1 - 5.9 ghz v03.0705
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 40 linear & power amplifiers - smt application circuit note 1: c9, c10 should be located < 0.020 from pins 9, 10, & 11. note 2: application circuit values shown are optimized for 5.7 - 5.9 ghz operation. contact our applications engineers for optimization of output match for other frequencies. recommended component values l1, l2 1.6 nh c1 - c4 1,000 pf c5 - c7 100 pf c8 2.2 f c9 - c10 0.5 pf tl1 tl2 impedance 50 ohm 50 ohm length 0.200 0.100 hmc408lp3 / 408lp3e gaas ingap hbt mmic 1 watt power amplifier, 5.1 - 5.9 ghz v03.0705
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 41 notes: hmc408lp3 / 408lp3e gaas ingap hbt mmic 1 watt power amplifier, 5.1 - 5.9 ghz v03.0705
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